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Electron Microscopy and Analysis Facility

The Electron Microscopy and Analysis Facility (EMAF) delivers state-of-the-art electron microscopy analyses with rapid turnaround time for industry and academia

Electron Microscopy

We develop customer- and product-specific analysis of materials and devices and provide comprehensive understanding of the measurement results:

  • Product contamination analysis
  • Thin film analysis (thickness + structure)
  • Failure analysis
  • Materials characterisation
  • Surface analysis
  • (S)TEM sample preparation
  • Trace analysis >10ppm
  • 3D visualisation
  • Correlative microscopy
  • Focused ion beam (FIB) patterning/prototyping.

Methods

  • Scanning electron microscopy (SEM) 
  • Elemental analysis (EDX and ToF-SIMS) 
  • (Scanning) transmission electron microscopy (S)TEM 
  • Dual beam focused ion beam (FIB) 
  • Electron Backscatter Diffraction (EBSD) 
  • Electron diffraction (SAED) 
  • Electron column for UHR imaging (immersion lens for non-magnetic samples only) 
  • Analysis mode: SE detector, for topography contrast 
  • UHR-resolution mode: In-beam SE 
  • Backscattered Mode: In-Beam f-BSE, Mid angle BSE 
  • Retractable BSE detector, for wide angle backscattered electrons for material contrast 
  • Retractable HADF STEM (R-STEM) detector: Bright field, Dark field and High Angle Dark Field 
  • SEM Resolution
    • 0.6nm @30kV, 20kV, and 15kV
    • 0.7nm @10kV
    • 1.0nm @5kV
    • 1.2nm @1kV
    • 1.7nm @500V 

Methods

Ga ion FIB column 

  • Aligned at 55 degrees to Electron column 
  • For cross sectioning, 2D/3D patterning, 3D tomography and TEM lamella preparation 

Xe ion FIB column 

  • Aligned at 55 degrees to Electron column 
  • For cross sectioning, 2D/3D patterning, and 3D tomography 

Nanoflat Delayering 

  • Milling rate up to 1000 µm3/s 

Detectors 

  • Oxford Aztec UltiMax 170 EDX & elemental analysis system 
  • Oxford Symmetry Electron Backscatter Spectroscopy (EBSD) 
  • Tofwerk Time of Flight Secondary lon Mass Spectroscopy (ToF-SIMS) 

Electron column for UHR imaging 

  • Analysis mode: SE detector, for topography contrast 
  • UHR-resolution mode: In-beam SE 
  • Backscattered Mode: In-Beam f-BSE, Mid angle BSE 
  • Retractable BSE detector, for wide angle backscattered electrons for material contrast 
  • Retractable HADF STEM (R-STEM) detector: Bright field, Dark field and High Angle Dark Field 


3D Virtual Lab Tour

Equipment catalogue

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